News

UNIM, a new force in the memory sector, has officially joined the Global Semiconductor Alliance (GSA)—further accelerating its mission to reshape the global memory landscape with advanced, reliable, and intelligent memory solutions.

Founded in 2021 and headquartered in Wuxi, China, UNIM designs high-reliability 2D NAND flash memory optimized for next-gen edge devices, from smart wearables and industrial IoT to intelligent vehicles. In less than a year, the company has secured tens of millions of USD in funding, launched its first 1Xnm industrial-grade 2D NAND memory, and built a world-class team of semiconductor veterans and national-level experts.

Performance. Precision. Possibility.

Memory powers every smart device. As AI, cloud, and edge computing scale, memory innovation becomes infrastructure.

UNIM’s fabless architecture is purpose-built for agility and scale. Its 19nm 2D NAND memory offers high endurance, fast data throughput, and rock-solid performance in extreme environments—meeting stringent industrial and automotive-grade standards. With complete IP ownership, UNIM delivers homegrown silicon that closes the gap with international leaders—at speed and at scale.

Engineered for the New Era of Intelligence

Backed by an academician-led R&D team, and operating across Wuxi, Shanghai, Shenzhen, Beijing, and Hong Kong, UNIM is scaling fast—building the future of smart storage for smart machines.

Joining GSA is more than recognition—it's a launchpad for global collaboration. As part of this ecosystem, UNIM is committed to driving open innovation, deeper integration, and sovereign memory breakthroughs that empower tomorrow's AI infrastructure.

The future is fast.
UNIM is built for it.