New Breakthrough in Flash Memory: UNIM Showcases 19 nm 2D SLC NAND Flash Products
At the Munich Shanghai Electronics Show on July 11, UNIM unveiled a new mass-production series based on 19 nm 2D SLC NAND flash, marking a major breakthrough in planar-NAND technology for the memory industry.
The series comes in 512 Mb, 1 Gb, and 2 Gb capacities, targeting the diverse requirements of industrial control, automotive, and consumer electronics. Through dedicated R&D, UNIM has advanced the 19 nm process node to deliver superior performance and exceptional reliability.
Capable of 100,000 program/erase cycles, the memory ensures long-term data integrity in demanding industrial and automotive environments, while its cost-efficient variants satisfy consumer-electronics price targets. During the exhibition, UNIM demonstrated feature phones, wearables, and networking devices powered by the new 19 nm NAND, underscoring its versatility across multiple use cases.
Understanding that memory needs vary widely, UNIM offers flexible capacities and specifications to serve complex applications—whether the goal is high-speed throughput in industrial systems, extreme-temperature stability in automotive electronics, or affordable high-performance for consumer devices.
At the product launch, Dr. Qiang Tang, Chairman of UNIM, said:
“We are proud to introduce this product line—it marks a significant milestone for UNIM. Our 19 nm 2D SLC NAND delivers high-performance, highly reliable memory solutions across industries, while offering best-in-class cost efficiency.”
He added:
“Our mission is to equip customers with world-class memory solutions for today's data challenges. Through continual innovation and technological leadership, UNIM will keep driving progress in the global memory market.”
UNIM remains committed to pushing the boundaries of flash technology. The launch of its 19 nm 2D SLC NAND products injects fresh momentum into the sector and propels the industry toward the next generation of memory innovation.
At the Munich Shanghai Electronics Show on July 11, UNIM unveiled a new mass-production series based on 19 nm 2D SLC NAND flash, marking a major breakthrough in planar-NAND technology for the memory industry.
The series comes in 512 Mb, 1 Gb, and 2 Gb capacities, targeting the diverse requirements of industrial control, automotive, and consumer electronics. Through dedicated R&D, UNIM has advanced the 19 nm process node to deliver superior performance and exceptional reliability.
Capable of 100,000 program/erase cycles, the memory ensures long-term data integrity in demanding industrial and automotive environments, while its cost-efficient variants satisfy consumer-electronics price targets. During the exhibition, UNIM demonstrated feature phones, wearables, and networking devices powered by the new 19 nm NAND, underscoring its versatility across multiple use cases.
Understanding that memory needs vary widely, UNIM offers flexible capacities and specifications to serve complex applications—whether the goal is high-speed throughput in industrial systems, extreme-temperature stability in automotive electronics, or affordable high-performance for consumer devices.
At the product launch, Dr. Qiang Tang, Chairman of UNIM, said:
“We are proud to introduce this product line—it marks a significant milestone for UNIM. Our 19 nm 2D SLC NAND delivers high-performance, highly reliable memory solutions across industries, while offering best-in-class cost efficiency.”
He added:
“Our mission is to equip customers with world-class memory solutions for today's data challenges. Through continual innovation and technological leadership, UNIM will keep driving progress in the global memory market.”
UNIM remains committed to pushing the boundaries of flash technology. The launch of its 19 nm 2D SLC NAND products injects fresh momentum into the sector and propels the industry toward the next generation of memory innovation.
